THE THERMAL-STABILITY OF LASER-PRODUCED SILICIDE LAYERS

被引：5

作者：

WITTMER, M ^{[1
]}

LUTHY, W ^{[1
]}

VONALLMEN, M ^{[1
]}

机构：

[1] UNIV BERN, INST APPL PHYS, CH-3012 BERN, SWITZERLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 10期

关键词：

D O I：

10.1063/1.327455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5386 / 5389

页数：4

共 32 条

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[2]

ANDERSON CL, 1980, LASER ELECTRON BEAM

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BRADLEY, P ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403

[4]

BROWN WL, 1978, RAPID SOLIDIFICATION

[5]

Chalmers B., 1977, PRINCIPLES SOLIDIFIC

[6]

CHU WK, 1980, LASER ELECTRON BEAM, P361

[7] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

SIMONS, AL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :320-322

[8]

Elliot R.P, 1965, CONSTITUTION BINARY

[9]

FERRIS SD, 1979, LASER SOLID INTERACT

[10] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

GOLOVCHENKO, JA ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :147-149

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