ANALYSIS OF THE DEPTH PROFILE OF FE-SI BURIED LAYERS IN FE+-IMPLANTED SI WAFER BY SOFT-X-RAY EMISSION-SPECTROSCOPY

被引：14

作者：

GALAKHOV, VR ^{[1
]}

KURMAEV, EZ ^{[1
]}

SHAMIN, SN ^{[1
]}

ELOKHINA, LV ^{[1
]}

YARMOSHENKO, YM ^{[1
]}

BUKHARAEV, AA ^{[1
]}

机构：

[1] PHYS TECH INST,KAZAN,RUSSIA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 72卷 / 01期

关键词：

D O I：

10.1016/0169-4332(93)90045-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The results of an investigation of Fe-implanted (E = 40 keV, D = 10(16) cm-2) silicon crystal by the use of soft X-ray emission spectroscopy with a variation of the exciting electron energy are presented. Based on the study of X-ray SiL2,3, Fe Lalpha and Si Kalpha spectra obtained at various exciting electron energies, the concentration profile as a function of the depth is constructed. The thickness of a buried FeSi-FeSi2 layer is estimated to be about 2000 angstrom.

引用

页码：73 / 77

页数：5

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