SOFT-X-RAY SPECTROSCOPIC ANALYSIS OF NI-SILICIDES

被引：8

作者：

NAKAMURA, H

HIRAI, M

KUSAKA, M

IWAMI, M

WATABE, H

机构：

[1] OKAYAMA UNIV,FAC SCI,SURFACE SCI RES LAB,OKAYAMA 700,JAPAN

[2] MATSUSHITA ELECT IND CO LTD,CHUO KU,OSAKA 540,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1992年 / 61卷 / 02期

关键词：

VALENCE BAND ELECTRONIC STRUCTURE; SI S-DENSITY OF STATE; SOFT X-RAY EMISSION SPECTROSCOPY; NI-SILICIDE; EXPERIMENT;

D O I：

10.1143/JPSJ.61.616

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The valence-band electronic structure of Ni-silicide system, NiSi2, NiSi and Ni2Si, has been studied by measuring soft X-ray Si L2,3 emission spectra. It is found that the Si L2,3 spectra show very different spectral features among these three silicides. The spectra of silicides are compared with the theoretical density of states and discussion is given on the electronic structure of these silicides. It is suggested that Si electronic state contributes significantly to the upper part of valence-band of the three silicide systems.

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页码：616 / 620

页数：5

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