CONTRIBUTION OF THE SI-S ELECTRONIC STATE TO THE DENSITY OF STATE OF COSI2 AT FERMI ENERGY BY SOFT-X-RAY EMISSION-SPECTROSCOPY

被引：11

作者：

IWAMI, M

NAKAMURA, H

HIRAI, M

KUSAKA, M

AZUMA, Y

AKAO, F

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

[2] OSAKA ELECTROCOMMUN UNIV,NEYAGAWA,OSAKA 572,JAPAN

[3] OKAYAMA UNIV,DEPT ELECTR ENGN,OKAYAMA 700,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1990年 / 29卷 / 03期

关键词：

Cobalt disilicide (CoSi[!sub]2[!/sub]); Experiment; Si s partial VB-DOS; Soft X-ray spectroscopy; Valence band electronic structure;

D O I：

10.1143/JJAP.29.L470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A clear modification is observed between an electron-excited Si L2.3 valence band (VB) soft X-ray emission spectrum (SXES) for CoSi2 and the one for Si. From this fact, it is concluded that a fair amount of the Si s electronic state is included in the upper half, especially at the Fermi edge, of the VB density of state (VB-DOS) of CoSi2. This fact is a clear contrast to many proposals given so far, where it is claimed that the upper part of the VB-DOS of CoSi2 is constructed only by the electronic states due to Co(3d)-Si(3p) hybridization. © 1990 The Japan Society of Applied Physics.

引用

页码：L470 / L472

页数：3

共 18 条

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AZAROFF LV, 1974, XRAY SPECTROSCOPY

[2] CORRELATION-EFFECTS IN VALENCE-BAND SPECTRA OF NICKEL SILICIDES [J].