NI ON SI - INTERFACIAL COMPOUND FORMATION AND ELECTRONIC-STRUCTURE

被引：36

作者：

KOBAYASHI, KLI ^{[1
]}

SUGAKI, S ^{[1
]}

ISHIZAKA, A ^{[1
]}

SHIRAKI, Y ^{[1
]}

DAIMON, H ^{[1
]}

MURATA, Y ^{[1
]}

机构：

[1] UNIV TOKYO, INST SOLID STATE PHYS, MINATO KU, TOKYO 106, JAPAN

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.25.1377

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1377 / 1380

页数：4

共 14 条

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[2]

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[9]

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[10] A STUDY OF AL-SI(111)-CLEAVED INTERFACE BY PHOTOEMISSION, AUGER-ELECTRON YIELD, AND AUGER-ELECTRON SPECTROSCOPIES [J].

KOBAYASHI, KLI ;

GERKEN, F ;

BARTH, J ;

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SOLID STATE COMMUNICATIONS, 1981, 39 (07) :851-855

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