VALENCE-BAND ELECTRONIC-STRUCTURE OF NISI2 AND COSI2 - EVIDENCE OF THE SI S-ELECTRONIC STATE AT THE FERMI EDGE

被引:37
作者
NAKAMURA, H
IWAMI, M
HIRAI, M
KUSAKA, M
AKAO, F
WATABE, H
机构
[1] OKAYAMA UNIV,FAC SCI,SURFACE SCI RES LAB,OKAYAMA 700,JAPAN
[2] OKAYAMA UNIV SCI,DEPT ELECTR ENGN,OKAYAMA 700,JAPAN
[3] MATSUSHITA ELECT IND CO LTD,HIGASHI KU,OSAKA 590,JAPAN
来源
PHYSICAL REVIEW B | 1990年 / 41卷 / 17期
关键词
D O I
10.1103/PhysRevB.41.12092
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
It is found that the Si L2,3 soft-x-ray emission band of a NiSi2 single crystal has two main peaks at h91 and 100 eV, where the Si L2,3 spectrum is expected to reflect the density of states of the valence band with s and d symmetry. The sharp peaks at the top of the valence band are concluded to be due to the s band that mainly originated from the Si s state and are not due to the d band that originated from the Ni d state, which is a clear departure from the existing widely accepted explanation of the valence-band density of states. A similar result may be true for CoSi2. © 1990 The American Physical Society.
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收藏
页码:12092 / 12095
页数:4
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