ELECTRONIC-STRUCTURE AND PROPERTIES OF SILICON TRANSITION-METAL INTERFACES

被引：4

作者：

BISI, O ^{[1
]}

CHIAO, LW ^{[1
]}

TU, KN ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SURFACE SCIENCE | 1985年 / 152卷 / APR期

关键词：

D O I：

10.1016/0039-6028(85)90537-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1185 / 1190

页数：6

共 14 条

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[6]

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[7] DIFFUSION LAYERS AND THE SCHOTTKY-BARRIER HEIGHT IN NICKEL SILICIDE-SILICON INTERFACES [J].

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[8] LATTICE-LOCATION EXPERIMENT OF THE NI-SI INTERFACE BY THIN-CRYSTAL CHANNELING OF HELIUM-IONS [J].

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[9]

FOLL F, 1981, J APPL PHYS, V52, P250, DOI 10.1063/1.328440

[10]

MURARKA SP, 1983, SILICIDES VLSI APPLI

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