MEASUREMENT OF LOW-ENERGY X-RAY DOSE ENHANCEMENT IN MOS DEVICES WITH METAL SILICIDE GATES

被引:9
作者
BENEDETTO, JM [1 ]
BOESCH, HE [1 ]
OLDHAM, TR [1 ]
BROWN, GA [1 ]
机构
[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
关键词
D O I
10.1109/TNS.1987.4337512
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1540 / 1543
页数:4
相关论文
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