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MEASUREMENT OF LOW-ENERGY X-RAY DOSE ENHANCEMENT IN MOS DEVICES WITH METAL SILICIDE GATES
被引:9
作者
:
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BENEDETTO, JM
[
1
]
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BOESCH, HE
[
1
]
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
OLDHAM, TR
[
1
]
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
BROWN, GA
[
1
]
机构
:
[1]
TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1987年
/ 34卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1987.4337512
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1540 / 1543
页数:4
相关论文
共 9 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
[J].
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:173
-175
[2]
THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1318
-1323
[3]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
:1480
-1497
[4]
THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4382
-4387
[5]
EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1981,
28
(06)
:4137
-4141
[6]
PHOTON ENERGY-DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1694
-1699
[7]
ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS
[J].
FLEETWOOD, DM
论文数:
0
引用数:
0
h-index:
0
FLEETWOOD, DM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
;
BEEGLE, RW
论文数:
0
引用数:
0
h-index:
0
BEEGLE, RW
;
DRESSENDORFER, PV
论文数:
0
引用数:
0
h-index:
0
DRESSENDORFER, PV
;
DRAPER, BL
论文数:
0
引用数:
0
h-index:
0
DRAPER, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:4369
-4375
[8]
THE RESPONSE OF MOS DEVICES TO DOSE-ENHANCED LOW-ENERGY RADIATION
[J].
FLEETWOOD, DM
论文数:
0
引用数:
0
h-index:
0
FLEETWOOD, DM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
;
LORENCE, LJ
论文数:
0
引用数:
0
h-index:
0
LORENCE, LJ
;
BEEZHOLD, W
论文数:
0
引用数:
0
h-index:
0
BEEZHOLD, W
;
DRESSENDORFER, PV
论文数:
0
引用数:
0
h-index:
0
DRESSENDORFER, PV
;
SCHWANK, JR
论文数:
0
引用数:
0
h-index:
0
SCHWANK, JR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1245
-1251
[9]
KERRIS KG, 1985, IEEE T NUCL SCI, V32, P4356
←
1
→
共 9 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
[J].
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:173
-175
[2]
THE RELATIONSHIP BETWEEN CO-60 AND 10-KEV X-RAY-DAMAGE IN MOS DEVICES
[J].
BENEDETTO, JM
论文数:
0
引用数:
0
h-index:
0
BENEDETTO, JM
;
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1318
-1323
[3]
REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
[J].
CHOW, TP
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
CHOW, TP
;
STECKL, AJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
RENSSELAER POLYTECH INST, CTR INTEGRATED ELECTR, TROY, NY 12181 USA
STECKL, AJ
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1983,
30
(11)
:1480
-1497
[4]
THE USE OF LOW-ENERGY X-RAYS FOR DEVICE TESTING - A COMPARISON WITH CO-60 RADIATION
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4382
-4387
[5]
EFFECT OF PHOTON ENERGY ON THE RESPONSE OF MOS DEVICES
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1981,
28
(06)
:4137
-4141
[6]
PHOTON ENERGY-DEPENDENCE OF RADIATION EFFECTS IN MOS STRUCTURES
[J].
DOZIER, CM
论文数:
0
引用数:
0
h-index:
0
DOZIER, CM
;
BROWN, DB
论文数:
0
引用数:
0
h-index:
0
BROWN, DB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1694
-1699
[7]
ACCOUNTING FOR DOSE-ENHANCEMENT EFFECTS WITH CMOS TRANSISTORS
[J].
FLEETWOOD, DM
论文数:
0
引用数:
0
h-index:
0
FLEETWOOD, DM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
;
BEEGLE, RW
论文数:
0
引用数:
0
h-index:
0
BEEGLE, RW
;
DRESSENDORFER, PV
论文数:
0
引用数:
0
h-index:
0
DRESSENDORFER, PV
;
DRAPER, BL
论文数:
0
引用数:
0
h-index:
0
DRAPER, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1985,
32
(06)
:4369
-4375
[8]
THE RESPONSE OF MOS DEVICES TO DOSE-ENHANCED LOW-ENERGY RADIATION
[J].
FLEETWOOD, DM
论文数:
0
引用数:
0
h-index:
0
FLEETWOOD, DM
;
WINOKUR, PS
论文数:
0
引用数:
0
h-index:
0
WINOKUR, PS
;
LORENCE, LJ
论文数:
0
引用数:
0
h-index:
0
LORENCE, LJ
;
BEEZHOLD, W
论文数:
0
引用数:
0
h-index:
0
BEEZHOLD, W
;
DRESSENDORFER, PV
论文数:
0
引用数:
0
h-index:
0
DRESSENDORFER, PV
;
SCHWANK, JR
论文数:
0
引用数:
0
h-index:
0
SCHWANK, JR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1986,
33
(06)
:1245
-1251
[9]
KERRIS KG, 1985, IEEE T NUCL SCI, V32, P4356
←
1
→