THE RESPONSE OF MOS DEVICES TO DOSE-ENHANCED LOW-ENERGY RADIATION

被引：33

作者：

FLEETWOOD, DM

WINOKUR, PS

LORENCE, LJ

BEEZHOLD, W

DRESSENDORFER, PV

SCHWANK, JR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1109/TNS.1986.4334586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1245 / 1251

页数：7

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