DEEP LEVELS IN HIGH-RESISTIVITY MATERIALS - SI AND CDS

被引：7

作者：

MERLET, C

BASTIDE, G

SAGNES, G

ROUZEYRE, M

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1978年 / 13卷 / 11期

关键词：

D O I：

10.1051/rphysap:019780013011056500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：565 / 569

页数：5

共 8 条

[1]

BASTIDE G, 1978, THESIS MONTPELLIER

[2] THERMAL ACTIVATION-ENERGY OF GOLD-ACCEPTOR LEVEL IN SILICON [J].

ENGSTROM, O ;

GRIMMEISS, HG .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (02) :831-837

[3]

ENGSTROM O, 1977, J APPL PHYS, V49, P667

[4] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J].

HURTES, C ;

BOULOU, M ;

MITONNEAU, A ;

BOIS, D .

APPLIED PHYSICS LETTERS, 1978, 32 (12) :821-823

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[6] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[7] THERMAL EMISSION RATES OF CARRIERS AT GOLD CENTERS IN SILICON [J].

SAH, CT ;

FORBES, L ;

ROSIER, LI ;

TASCH, AF ;

TOLE, AB .

APPLIED PHYSICS LETTERS, 1969, 15 (05) :145-+

[8]

VAPAILLE A, 1970, PHYSIQUE SEMICONDUCT, P84

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