PROBLEMS OF REACTION-KINETICS DURING DEPOSITION OF SILICON-OXIDE FILMS BY REACTIVE SPUTTERING OF SILICON IN A MAGNETRON SPUTTERING SYSTEM

被引：4

作者：

BRODKORB, W

SALM, J

STEINBEISS, C

STEINBEISS, E

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 57卷 / 01期

关键词：

D O I：

10.1002/pssa.2210570164

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K49 / K53

页数：5

共 6 条

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[3]

RITTER E, 1964, MONATSH CHEM, V95, P795

SALM, J ;

STEENBECK, K ;

STEINBEISS, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 54 (01) :K23-K26

[5] MECHANISM OF RF REACTIVE SPUTTERING [J].

SHINOKI, F ;

ITOH, A .

[6]

Trapnell B. M. W., 1955, CHEMISORPTION