CHARACTERIZATION OF POROUS SILICON INHOMOGENEITIES BY HIGH-SPATIAL-RESOLUTION INFRARED-SPECTROSCOPY

被引：82

作者：

BORGHESI, A

SASSELLA, A

PIVAC, B

PAVESI, L

机构：

[1] UNIV PAVIA,DIPARTIMENTO FIS A VOLTA,I-27100 PAVIA,ITALY

[2] RUDJER BOSKOVIC INST,ZAGREB 41000,CROATIA

[3] UNIV TRENT,DIPARTIMENTO FIS,I-38050 TRENT,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 87卷 / 01期

关键词：

D O I：

10.1016/0038-1098(93)90524-Q

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A detailed analysis of infrared absorption spectra of porous silicon is performed on the basis of high spatial resolution measurements. Microscopic inhomogeneity and a strong influence of storage ambient are observed. Si atoms of the porous silicon surface are found to bind to H, O, C atoms and to CH3 and OH groups. The presence of free H2O molecules is also detected.

引用

页码：1 / 4

页数：4

共 16 条

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