ROLE OF OPTICAL FLUX AND OF CURRENT DENSITY IN GRADUAL DEGRADATION OF GAAS INJECTION LASERS

被引:11
作者
BYER, NE
机构
[1] RCA Laboratories, Princeton, N.J.
关键词
D O I
10.1109/JQE.1969.1075764
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A GaAs dual-diode laser structure was used to give electrical control of the laser threshold and so permit separate study of the effect of optical flux on gradual degradation. At a given current density, degradation occurs under nonlasing conditions at about the same rate as under normal lasing conditions. The degradation rate is a superlinear function of current density. Degradation is an erratic process in which the rate varies sporadically during operation. Copyright © 1969 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:242 / +
页数:1
相关论文
共 7 条
[2]   CATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].
KRESSEL, H ;
MIEROP, H .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (13) :5419-&
[3]   OBSERVATIONS CONCERNING SELF-DAMAGE IN GAAS INJECTION LASERS [J].
KRESSEL, H .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1968, QE 4 (04) :176-&
[4]   PHYSICAL BASIS OF NONCATASTROPHIC DEGRADATION IN GAAS INJECTION LASERS [J].
KRESSEL, H ;
BYER, NE .
PROCEEDINGS OF THE IEEE, 1969, 57 (01) :25-&
[5]   ANALYSIS OF A PROPOSED BISTABLE INJECTION LASER [J].
LASHER, GJ .
SOLID-STATE ELECTRONICS, 1964, 7 (10) :707-716
[6]   HIGH-POWER PULSED GAAS LASER DIODES OPERATING AT ROOM TEMPERATURE [J].
NELSON, H .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1415-&
[7]  
NELSON H, 1963, RCA REV, V24, P603