HIGH-POWER PULSED GAAS LASER DIODES OPERATING AT ROOM TEMPERATURE

被引：24

作者：

NELSON, H

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 08期

关键词：

D O I：

10.1109/PROC.1967.5843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1415 / &

共 11 条

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[3]

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[7] HIGH-EFFICIENCY INJECTION LASER AT ROOM TEMPERATURE [J].

NELSON, H ;

DOUSMANIS, GC ;

HAWRYLO, F ;

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[8]

NELSON H, 1963, RCA REV, V24, P603

[9] OPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL AND DIFFUSED GAAS INJECTION LASERS [J].

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[10]

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