EFFECTS OF DYNAMIC STRESSING ON NITRIDED AND REOXIDIZED-NITRIDED CHEMICAL-VAPOR-DEPOSITED GATE OXIDES

被引：2

作者：

HWANG, HS ^{[1
]}

TING, WC ^{[1
]}

KWONG, DL ^{[1
]}

LEE, J ^{[1
]}

BUHROW, L ^{[1
]}

BOWLING, RA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：568 / 570

页数：3

共 9 条

[1]

CHEN IC, 1985, P INT RELIABILITY PH, P24

[2]

Crook DL., 1979, P 17 INT REL PHYS S, P1

[3]

FAZAN P, 1986, 170TH EL SOC M SAN D, P604

[4]

Fong Y., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P664

[5] THE NATURE OF CHARGE TRAPPING RESPONSIBLE FOR THIN-OXIDE BREAKDOWN UNDER A DYNAMIC FIELD STRESS [J].

HADDAD, S ;

LIANG, MS .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :524-527

[6] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS [J].

HU, G ;

JOHNSON, WC .

APPLIED PHYSICS LETTERS, 1980, 36 (07) :590-591

[7] ELECTRICAL CHARACTERISTICS OF REOXIDIZED-NITRIDED CHEMICAL VAPOR-DEPOSITED OXIDES [J].

HWANG, H ;

TING, W ;

KWONG, DL ;

LEE, J ;

BUHROW, L ;

BOWLING, RA .

APPLIED PHYSICS LETTERS, 1989, 55 (08) :755-756

[8] 2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE [J].

LAI, SK .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :58-60

[9]

Liang M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P394

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