THE NATURE OF CHARGE TRAPPING RESPONSIBLE FOR THIN-OXIDE BREAKDOWN UNDER A DYNAMIC FIELD STRESS

被引：20

作者：

HADDAD, S

LIANG, MS

机构：

来源：

关键词：

D O I：

10.1109/EDL.1987.26716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：524 / 527

页数：4

共 9 条

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[2]

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[3]

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[4]

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[5]

Fong Y., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P664

LAI, SK .

[7]

Liang M., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P394

[8]

LIANG MS, 1984, IEEE T ELECTRON DEV, V31, P1238, DOI 10.1109/T-ED.1984.21694

[9] HIGH-FIELD CURRENT INDUCED-POSITIVE CHARGE TRANSIENTS IN SIO2 [J].

NISSANCOHEN, Y ;

SHAPPIR, J ;

FROHMANBENTCHKOWSKY, D .