ELECTRICAL CHARACTERISTICS OF REOXIDIZED-NITRIDED CHEMICAL VAPOR-DEPOSITED OXIDES

被引：2

作者：

HWANG, H ^{[1
]}

TING, W ^{[1
]}

KWONG, DL ^{[1
]}

LEE, J ^{[1
]}

BUHROW, L ^{[1
]}

BOWLING, RA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.102443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：755 / 756

页数：2

共 15 条

[1]

BALK P, 1983, SOLID STATE DEVICES, V69, P63

[2] CAPTURE AND TUNNEL EMISSION OF ELECTRONS BY DEEP LEVELS IN ULTRATHIN NITRIDED OXIDES ON SILICON [J].

CHANG, ST ;

JOHNSON, NM ;

LYON, SA .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :316-318

[3] HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].

CHEN, IC ;

HOLLAND, S ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167

[4] MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN OXIDE LAYER OF MOS DEVICES [J].

GWYN, CW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (12) :4886-+

[5]

HARRI E, 1977, J APPL PHYS, V48, P5217

[6] CHARGE-TRAPPING PROPERTIES OF ULTRATHIN NITRIDED OXIDES PREPARED BY RAPID THERMAL ANNEALING [J].

HORI, T ;

IWASAKI, H ;

TSUJI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :904-910

[7] ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].

ITO, T ;

NAKAMURA, T ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502

[8]

JAYARAMAN R, 1986, IEEE IEDM TECH DIGES, V86, P668

[9]

LAI SK, 1983, IEEE IEDM TECH DIGES, V83, P190

[10] COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY [J].

LEE, J ;

CHEN, IC ;

HU, C .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :506-509

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