PHYSICAL PHENOMENA IN SEMICONDUCTORS WITH NEGATIVE DIFFERENTIAL CONDUCTIVITY

被引:189
作者
VOLKOV, AF
KOGAN, SM
机构
来源
SOVIET PHYSICS USPEKHI-USSR | 1969年 / 11卷 / 06期
关键词
D O I
10.1070/PU1969v011n06ABEH003780
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:881 / +
页数:1
相关论文
共 171 条
[31]  
BONCH-BRUEVICH VL, 1966, FIZ TVERD TELA+, V8, P752
[32]  
BONCHBRUEVICH VL, 1964, FIZ TVERD TELA, V6, P2047
[33]  
BONCHBRUEVICH VL, 1965, FIZ TVERD TELA, V7, P750
[35]   THEORY OF STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN .
PHYSICS LETTERS, 1965, 19 (07) :546-&
[36]   INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS [J].
BUTCHER, PN ;
FAWCETT, W .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P) :1205-&
[37]   STABLE DOMAIN PROPAGATION IN GUNN EFFECT [J].
BUTCHER, PN ;
FAWCETT, W .
BRITISH JOURNAL OF APPLIED PHYSICS, 1966, 17 (11) :1425-&
[38]   INELASTIC SCATTERING OF ELECTRONS IN GERMANIUM [J].
CALLAWAY, J ;
CUMMINGS, FW .
PHYSICAL REVIEW, 1962, 126 (01) :5-&
[39]   DIRECT OBSERVATION OF DRIFT VELOCITY AS A FUNCTION OF ELECTRIC FIELD IN GALLIUM ARSENIDE [J].
CHANG, DM ;
MOLL, JL .
APPLIED PHYSICS LETTERS, 1966, 9 (08) :283-+
[40]   HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].
CONWELL, EM ;
VASSELL, MO .
PHYSICAL REVIEW, 1968, 166 (03) :797-+