PHYSICAL PHENOMENA IN SEMICONDUCTORS WITH NEGATIVE DIFFERENTIAL CONDUCTIVITY

被引:189
作者
VOLKOV, AF
KOGAN, SM
机构
来源
SOVIET PHYSICS USPEKHI-USSR | 1969年 / 11卷 / 06期
关键词
D O I
10.1070/PU1969v011n06ABEH003780
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:881 / +
页数:1
相关论文
共 171 条
[41]  
COPELAND JA, 1967, ELECTRONICS, V40, P131
[42]   THEORETICAL STUDY OF A GUNN DIODE IN A RESONANT CIRCUIT [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :55-+
[43]   STABLE SPACE-CHARGE LAYERS IN 2-VALLEY SEMICONDUCTORS [J].
COPELAND, JA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (09) :3602-+
[44]  
DAVYDOV BI, 1937, ZH EKSP TEOR FIZ, V7, P1069
[45]   MICROWAVE OSCILLATIONS IN HIGH-RESISTIVITY GAAS [J].
DAY, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) :88-+
[46]  
DEVYATKOV AG, 1964, FIZ TVERD TELA, V6, P722
[47]  
DEVYATKOV AG, 1964, SOV PHYS-SOLID STATE, V6, P563
[48]  
DOW DG, 1967, ELECTRONICS, V40, P129
[49]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[50]  
ELEONSKII VM, 1968, SOV PHYS JETP-USSR, V26, P382