ELECTRONIC QUENCHING RATE CONSTANTS FOR XE(P-3(2), AR(P-3(0), AND AR(P-3(2) ATOMS BY FLUORINE-CONTAINING MOLECULES, SIH4, SIH2CL2, SIHCL3, AND SICL4

The room temperature quenching mte constants for Xe(3P2), Ar(3P2), and Ar(3P0) atoms have been measured for approximately 30 molecules, selected so as to extend results of an earlier study (Velazco; et al. J. Chem. Phys. 1978, 69, 4357) to molecules containing fluorine, as well as a series containing Si. Highly fluorinated molecules have small quenching rate constants, especially with Xe(3P2). The data from the molecules with large thermal quenching cross sections, (sigma(Q)) greater-than-or-equal-to 30 angstrom 2, are combined with previous data to confirm the correlation of the quenching cross sections with parameters related to the long-range interaction potential. The correlation of In sigma(Q)(T) versus In C6 can be used to estimate cross sections that have not been measured. A few reactions with Ar(3P0,2) gave emission from product fragments. In addition to the SiCl2(A1B1-X1A1) transition, an emission from 500 to 600 nm was found from Ar(3P0,2) with SiCl4 and SiHCl3, which is assigned to the SiCl2(a3B1-X1A1) transition.