PROPERTIES OF A SEMICONDUCTOR SURFACE AS DETERMINED FROM A MODIFIED DRIFT MOBILITY EXPERIMENT

被引：8

作者：

HARRICK, NJ

机构：

来源：

PHYSICAL REVIEW LETTERS | 1959年 / 2卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.2.199

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：199 / 200

页数：2

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[1] CHARACTERISTICS OF JUNCTIONS IN GERMANIUM
HARRICK, NJ
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (05) : 764 - 770
[2] CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR
KINGSTON, RH
NEUSTADTER, SF
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) : 718 - 720
[3] FIELD EFFECT IN GERMANIUM AT HIGH FREQUENCIES
MONTGOMERY, HC
[J]. PHYSICAL REVIEW, 1957, 106 (03): : 441 - 445
[4] DRIFT MOBILITIES IN SEMICONDUCTORS .1. GERMANIUM
PRINCE, MB
[J]. PHYSICAL REVIEW, 1953, 92 (03): : 681 - 687