A SEMIANALYTICAL APPROACH TO COMPUTE THE DECAY OF OPTICALLY GENERATED CARRIERS IN SILICON-WAFER

A diffusion model is applied to the recombination dynamics of photogenerated carriers created by laser beam incident to a silicon slab. This analysis yields excess carrier density as an analytical function of time and depth, allowing a fast modeling of excess carrier decay with multi-parameter tuning capability such as excess carrier diffusion coefficient, wafer thickness, surface recombination velocity, bulk lifetime, excitation light absorption coefficient and pulse duration of the excitation laser beam.