TRAP-AUGER RECOMBINATION IN SILICON OF LOW CARRIER DENSITIES

被引：59

作者：

LANDSBERG, PT

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 12期

关键词：

D O I：

10.1063/1.98086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：745 / 747

页数：3

共 9 条

[1] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].

DZIEWIOR, J ;

SCHMID, W .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348

[2] RECOMBINATION STATISTICS FOR AUGER EFFECTS WITH APPLICATIONS TO P-N JUNCTIONS [J].

EVANS, DA ;

LANDSBERG, PT .

SOLID-STATE ELECTRONICS, 1963, 6 (02) :169-181

[3] AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND-GAP SEMICONDUCTORS [J].

HAUG, A .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 108 (02) :443-448

[4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[5]

LANDSBERG PT, 1982, HDB SEMICONDUCTORS, V1, P411

[6]

LANDSBERG PT, 1982, P INT WORKSHOP PHYSI, P30

[7] RECOMBINATION MECHANISMS AND DOPING DENSITY IN SILICON [J].

PASSARI, L ;

SUSI, E .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3935-3937

[8] AUGER RECOMBINATION IN SILICON AT LOW CARRIER DENSITIES [J].

YABLONOVITCH, E ;

GMITTER, T .

APPLIED PHYSICS LETTERS, 1986, 49 (10) :587-589

[9] UNUSUALLY LOW SURFACE-RECOMBINATION VELOCITY ON SILICON AND GERMANIUM SURFACES [J].

YABLONOVITCH, E ;

ALLARA, DL ;

CHANG, CC ;

GMITTER, T ;

BRIGHT, TB .

PHYSICAL REVIEW LETTERS, 1986, 57 (02) :249-252

← 1 →