AUGER RECOMBINATION IN SILICON AT LOW CARRIER DENSITIES

被引：131

作者：

YABLONOVITCH, E

GMITTER, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97049

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：587 / 589

页数：3

共 11 条

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[4] DEPENDENCE OF CARRIER MOBILITY IN SILICON ON CONCENTRATION OF FREE CHARGE-CARRIERS .2. [J].

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SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P318

[8] LIMITING EFFICIENCY OF SILICON SOLAR-CELLS [J].

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YABLONOVITCH, E ;

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BROOKS, BG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (05) :711-716

[9]

VAITKUS Y, 1981, SOV PHYS SEMICOND+, V15, P1102

[10] THE PASSIVATION OF ELECTRICALLY ACTIVE-SITES ON THE SURFACE OF CRYSTALLINE SILICON BY FLUORINATION [J].

WEINBERGER, BR ;

DECKMAN, HW ;

YABLONOVITCH, E ;

GMITTER, T ;

KOBASZ, W ;

GAROFF, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :887-891

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