RECOMBINATION MECHANISMS AND DOPING DENSITY IN SILICON

[1] ABAKUMOV VN, 1977, SOV PHYS SEMICOND, V11, P760

[2] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580

[3] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[4] BECK JD, 1972, SOLID STATE COMMUN, V10, P321

[5] 2-ELECTRON BAND TO BAND TRANSITIONS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 823 - 825

[6] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[7] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[8] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +

[9] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[10] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[1] ABAKUMOV VN, 1977, SOV PHYS SEMICOND, V11, P760

[2] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1975, 18 (06) : 579 - 580

[3] AUGER EFFECT IN SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29

[4] BECK JD, 1972, SOLID STATE COMMUN, V10, P321

[5] 2-ELECTRON BAND TO BAND TRANSITIONS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (07) : 823 - 825

[6] BLINOV LM, 1968, FIZ TVERD TELA+, V9, P2537

[7] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[8] MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (03) : 321 - +

[9] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[10] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348