CHARACTERIZATION OF SNO2 FILMS DEPOSITED BY DC GAS-DISCHARGE ACTIVATING REACTION EVAPORATION ONTO AMORPHOUS AND CRYSTALLINE SUBSTRATES

被引：18

作者：

ZHU, YH

LU, H

LU, YC

PAN, XR

机构：

[1] Department of Physics, East China University of Chemical Technology, Shanghai

来源：

THIN SOLID FILMS | 1993年 / 224卷 / 01期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/0040-6090(93)90462-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A d.c. gas discharge activating reaction evaporation technique was used to prepare gas-sensitive SnO2 films. The thin films of ultrafine particles and large-area crystallites were grown successfully on glass and SiO2(110) substrates respectively. The films were characterized by X-ray photoelectron spectroscopy, transmission and scanning electron microscopies and X-ray diffraction, and their gas-sensing properties were also investigated. The ultrafine particle film with average particle size of 40 nm exhibited a high sensitivity of 77 at 210-degrees-C to 100 PPM C2H5OH and a good selectivity for detecting C2H5OH in the presence of gasoline gas; the large-area crystalline thin film exhibited a fast response below 2 s to C2H5OH at 330-degrees-C and a remarkable oscillation of the conductivity after pulse exposure to C2H5OH.

引用

页码：82 / 86

页数：5

共 9 条

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