ELECTRICAL-PROPERTIES OF TIN OXIDE ULTRAFINE PARTICLE FILMS

[1] THIN-FILMS OF SNO2 AS SOLID-STATE GAS SENSORS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) : 29 - 49

[2] [Anonymous], [No title captured], Patent No. 3695848

[3] THIN-FILM SEMICONDUCTOR NOX SENSOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1875 - 1880

[4] CHON H, 1966, DISCUSS FARADAY SOC, P380

[5] HALL EFFECT STUDIES OF OXYGEN CHEMISORPTION ON ZINC OXIDE [J]. JOURNAL OF CATALYSIS, 1969, 14 (03) : 257 - &

[6] DOI I, 1976, T IECE JPN EDD

[7] IHOKURA K, 1979, APR ACS CSJ CHEM C H

[8] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

[9] CHEMISORPTION STATES OF IONIC LATTICES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (04) : 689 - &

[10] THICK-FILM CO GAS SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 247 - 249

[1] THIN-FILMS OF SNO2 AS SOLID-STATE GAS SENSORS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) : 29 - 49

[2] [Anonymous], [No title captured], Patent No. 3695848

[3] THIN-FILM SEMICONDUCTOR NOX SENSOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (12) : 1875 - 1880

[4] CHON H, 1966, DISCUSS FARADAY SOC, P380

[5] HALL EFFECT STUDIES OF OXYGEN CHEMISORPTION ON ZINC OXIDE [J]. JOURNAL OF CATALYSIS, 1969, 14 (03) : 257 - &

[6] DOI I, 1976, T IECE JPN EDD

[7] IHOKURA K, 1979, APR ACS CSJ CHEM C H

[8] JARZEBSKI ZM, 1976, J ELECTROCHEM SOC, V123, pC199, DOI [10.1149/1.2133010, 10.1149/1.2132647, 10.1149/1.2133090]

[9] CHEMISORPTION STATES OF IONIC LATTICES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (04) : 689 - &

[10] THICK-FILM CO GAS SENSORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (03) : 247 - 249