ELECTRON-BEAM FABRICATION OF SUB-MICRON GATES FOR GAAS FETS

被引：7

作者：

BLOCKER, TG

MACKSEY, HM

DOERBECK, FH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 03期

关键词：

D O I：

10.1116/1.569686

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：965 / 968

页数：4

共 9 条

[1]

BLOCKER TG, 1976, P WORKSHOP MICROELEC, P653

[2] PROXIMITY EFFECT IN ELECTRON-BEAM LITHOGRAPHY [J].

CHANG, THP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1975, 12 (06) :1271-1275

[3]

CHANG THP, 1976, P S ELECTRON ION BEA, P392

[4]

LIECHTI CA, 1972, ISSCC DIG TECH PAPER, P158

MACKSEY, HM ;

ADAMS, RL ;

MCQUIDDY, DN ;

SHAW, DW ;

WISSEMAN, WR .

[6]

Moran J. M., 1976, International Electron Devices Meeting. (Technical digest), P446

[7]

OZDEMIR FS, 1976, 7TH P INT C EL ION B, P411

[8]

Takahashi S., 1976, International Electron Devices Meeting. (Technical digest), P214

[9] E-BEAM WRITING TECHNIQUES FOR SEMICONDUCTOR-DEVICE FABRICATION [J].

VARNELL, GL ;

SPICER, DF ;

RODGER, AC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1973, 10 (06) :1048-1051