DIATOMIC-COMPLEX DONOR AND ACCEPTOR MODEL FOR GE-DOPED VAPOR-GROWN GAAS

[21] SZE SM, 1969, PHYSICS SEMICONDUCTO

[22] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[23] WANG CJ, 1973, J APPL PHYS, V44, P3240

[24] ANOMALOUS MOBILITY EFFECTS IN SOME SEMICONDUCTORS AND INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1817 - &

[25] EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J]. PHYSICAL REVIEW, 1968, 168 (03): : 922 - &

[26] WILLIAMS EW, 1972, SEMICONDUCTORS SEMIM, V8, P354

[27] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567

[28] EFFECT OF SURFACE STATES ON AMPHOTERIC BEHAVIOR OF SN IN VAPOR EPITAXIAL GAAS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 283 - 285

[21] SZE SM, 1969, PHYSICS SEMICONDUCTO

[22] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[23] WANG CJ, 1973, J APPL PHYS, V44, P3240

[24] ANOMALOUS MOBILITY EFFECTS IN SOME SEMICONDUCTORS AND INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) : 1817 - &

[25] EVIDENCE FOR SELF-ACTIVATED LUMINESCENCE IN GAAS - GALLIUM VACANCY-DONOR CENTER [J]. PHYSICAL REVIEW, 1968, 168 (03): : 922 - &

[26] WILLIAMS EW, 1972, SEMICONDUCTORS SEMIM, V8, P354

[27] SELF-COMPENSATION OF DONORS IN HIGH-PURITY GAAS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (10) : 564 - 567

[28] EFFECT OF SURFACE STATES ON AMPHOTERIC BEHAVIOR OF SN IN VAPOR EPITAXIAL GAAS [J]. SOLID STATE COMMUNICATIONS, 1973, 12 (04) : 283 - 285