HIGH-SENSITIVITY NONDESTRUCTIVE PROFILING OF RADIATION-INDUCED DAMAGE IN MOS STRUCTURES

A new technique for determining in-depth profiles is presented. It is based on a modified and differepAiatl Zerbst plot. It operates down to doses of the l010/cm2 range, and is non-destructive, fast and suited for MOS process control. Extraction of the doping profile is included. The results of 1 MeV and 2 MeV P+ and 600 keV He+ implants in Si are shown as an example. A temperature scan yields activation energies of 0.18 eV, 0.46 eV, and 0.49 eV resp.; for He, this level is localized above E., and its capture crossection is 4.7.10-17 cm2. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.