OPTICAL PROBING OF INTERMIXING IN GAAS-ALGAAS MULTIQUANTUM WELLS

被引：2

作者：

SEIDEL, W ^{[1
]}

LUGAGNEDELPON, E ^{[1
]}

VOISIN, P ^{[1
]}

RAO, EVK ^{[1
]}

KRAUZ, P ^{[1
]}

ALEXANDRE, F ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN, F-92220 BAGNEUX, FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.354606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that a combination of low-temperature photoluminescence and luminescence excitation spectroscopies together with appropriate modelization can provide the precise information needed for a thorough control of interdiffusion in quantum well structures. A fit of observed and calculated transition energies up to five energy levels, using the interdiffusion length as a unique parameter, is considered. The potentiality of this procedure to fully characterize the interdiffusion process is illustrated by considering the examples of lightly and heavily intermixed GaAs-AlGaAs multiquantum wells.

引用

页码：2968 / 2970

页数：3

共 16 条

[1] HIGH-SPEED (10 GBIT/S) AND LOW-DRIVE-VOLTAGE (1V PEAK TO PEAK) INGAAS/INGAASP MQW ELECTROABSORPTION-MODULATOR INTEGRATED DFB LASER WITH SEMIINSULATING BURIED HETEROSTRUCTURE [J].