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RELIABILITY OF ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：18
作者：
HAFIZI, M
STANCHINA, WE
METZGER, RA
JENSEN, JF
WILLIAMS, F
机构：
[1] Hughes Research Laboratories, Malibu, CA 90265, 3011 Malibu Can-Rd.
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 12期
关键词：
D O I：
10.1109/16.249462
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the reliability of high-performance AlInAs/GaInAs heterojunction bipolar transistors. Devices with MBE grown base Be doping level of 5 x 10(19) cm(-3) and base thickness of approximately 50 nm displayed no sign of Be diffusion under applied bias. Excellent stability in dc current gain, device turn-on voltage, and base-emitter junction characteristics was observed. Accelerated lifetest experiments were performed under an applied constant collector current density of 7 x 10(4) A/cm(2) at ambient temperatures of 193, 208, and 228 degrees C. Junction temperature and device thermal resistance was determined experimentally. Degradation of the base-collector junction was used as failure criteria to project a mean-time-to-failure in excess of 10(7) h at 125 degrees C junction temperature with an associated activation energy of 1.92 eV.
引用
收藏
页码：2178 / 2185
页数：8
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