POLARIZATION STUDY OF THE P(1X1)-PHASES AND P(1X2)-PHASES OF BI/GASB(110) USING LINEARLY POLARIZED SYNCHROTRON-RADIATION

被引:7
作者
MCILROY, DN
HESKETT, D
MCLEAN, AB
LUDEKE, R
MUNEKATA, H
DINARDO, NJ
机构
[1] QUEENS UNIV,DEPT PHYS,KINGSTON K7L 3N6,ONTARIO,CANADA
[2] DREXEL UNIV,DEPT PHYS & ATMOSPHER SCI,PHILADELPHIA,PA 19104
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.586918
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The polarization dependence of the surface state bands of the ordered p(1 X 1)- and p(1 X 2)-phases of Bi/GaSb(110) at monolayer coverages has been studied with the technique of angle-resolved ultraviolet photoemission spectroscopy. Four new Bi-induced surface state bands (S', S'', S''', and S(IV)) have been observed. The polarization dependence of these states have been probed at the high symmetry points of the surface Brillouin zone and compared with the polarization dependence of corresponding surface state bands of other group-V semimetals on III-V(110) compound semiconductors. For the (1 X 1)-phase, the states S'', S''', and S(IV) all exhibited p(z)-like dependence at all of the high symmetry points. The polarization dependence of S' was observed to evolve from p(xy)-like at the XBAR' point of the surface Brillouin zone to p(z)-like character at the other high symmetry points. The polarization dependence of S'', S''', and S(IV) were relatively unaffected by the phase transition of the overlayer from the (1 X 1)-phase to the (1 x 2)-phase.
引用
收藏
页码:1486 / 1491
页数:6
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