A SPECTRAL FLUX METHOD FOR SOLVING THE BOLTZMANN-EQUATION

被引：3

作者：

ALAM, MA

STETTLER, MA

LUNDSTROM, MS

机构：

[1] School of Electrical Engineering, Purdue University, West Lafayette

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 10期

关键词：

D O I：

10.1063/1.353819

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A spectral method for solving the Boltzmann equation by the scattering matrix approach is presented. The algorithm discussed can be used to simulate both bulk and device properties with arbitrary field profiles. Although the primary goal is to reduce the data storage problem of the scattering matrix approach, many of the concepts and mathematical properties developed may be useful for other traditional spectral methods as well.

引用

收藏

页码：4998 / 5003

页数：6

相关论文

共 12 条

[1] FORMULATION OF THE BOLTZMANN-EQUATION IN TERMS OF SCATTERING MATRICES [J].

ALAM, MA ;

STETTLER, MA ;

LUNDSTROM, MS .

SOLID-STATE ELECTRONICS, 1993, 36 (02) :263-271

[2] ACCOUNTING FOR BAND-STRUCTURE EFFECTS IN THE HYDRODYNAMIC MODEL - A 1ST-ORDER APPROACH FOR SILICON DEVICE SIMULATION [J].

BORDELON, TJ ;

WANG, XL ;

MAZIAR, CM ;

TASCH, AF .

SOLID-STATE ELECTRONICS, 1992, 35 (02) :131-139

[3] A SCATTERING MATRIX APPROACH TO DEVICE SIMULATION [J].

DAS, A ;

LUNDSTROM, MS .

SOLID-STATE ELECTRONICS, 1990, 33 (10) :1299-1307

[4] MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].

FISCHETTI, MV ;

LAUX, SE .

PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745

[5] IMPROVED BALANCE-EQUATIONS FOR MODELING NONSTATIONARY TRANSPORT AND THE ELECTRON-DISTRIBUTION FUNCTION IN GAAS [J].

HINTZ, A ;

SCHUNEMANN, K .

SOLID-STATE ELECTRONICS, 1992, 35 (02) :165-180

[6] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

[7]

LECOZ YL, 1988, THESIS MIT

[8] AN EFFICIENT DETERMINISTIC SOLUTION OF THE SPACE-DEPENDENT BOLTZMANN TRANSPORT-EQUATION FOR SILICON [J].

LIN, HC ;

GOLDSMAN, N ;

MAYERGOYZ, ID .

SOLID-STATE ELECTRONICS, 1992, 35 (01) :33-42

[9] THE INFLUENCE OF THE THERMAL-EQUILIBRIUM APPROXIMATION ON THE ACCURACY OF CLASSICAL TWO-DIMENSIONAL NUMERICAL MODELING OF SILICON SUBMICROMETER MOS-TRANSISTORS [J].

MEINERZHAGEN, B ;

ENGL, WL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (05) :689-697

[10]

REGGIANI L, 1985, HOT ELECTRON TRANSPO