MBE GROWTH OF GAAS NANOMETER-SCALE RIDGE QUANTUM-WIRE STRUCTURES AND THEIR STRUCTURAL AND OPTICAL CHARACTERIZATIONS

被引：19

作者：

KOSHIBA, S

NOGE, H

ICHINOSE, H

AKIYAMA, H

NAKAMURA, Y

INOSHITA, T

SOMEYA, T

WADA, K

SHIMIZU, A

SAKAKI, H

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LARGE SCALE INTEGRAT LABS, ATSUGI, KANAGAWA 24301, JAPAN

[2] UNIV TOKYO, BUNKYO KU, TOKYO 153, JAPAN

[3] UNIV TOKYO, ADV SCI & TECHNOL RES CTR, MEGURO KU, TOKYO 153, JAPAN

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90287-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel method for fabrication of the quantum wire structures has been investigated by which a quantum wire has been successfully fabricated on top of a (111)B facet structure with a very sharp ridge. Electron microscope study has shown that GaAs wires with the effective lateral width of 16-18 nm and with the thickness of 6-9 nm are formed at the ridge top. Photoluminescence and cathodoluminescence measurements indicate that 1D quantum confinement of electrons is realized at the ridge top and its blue shift agrees with the quantum confined energy calculated for the observed wire structure.

引用

页码：729 / 732

页数：4

共 27 条

[1]

AKIYAMA H, UNPUB

[2]

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