RAMAN-STUDY OF AMORPHOUS TO MICROCRYSTALLINE PHASE-TRANSITION IN CW LASER ANNEALED A-SI-H FILMS

被引:77
作者
MAVI, HS
SHUKLA, AK
ABBI, SC
JAIN, KP
机构
关键词
D O I
10.1063/1.343723
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:5322 / 5326
页数:5
相关论文
共 14 条
  • [1] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE
    ALBEN, R
    WEAIRE, D
    SMITH, JE
    BRODSKY, MH
    [J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296
  • [2] BALKANSKI M, 1979, SOLID STATE COMMUN, V31, P805
  • [3] SOLID-PHASE CRYSTALLIZATION KINETICS IN DOPED ALPHA-SI CHEMICAL-VAPOR-DEPOSITION FILMS
    BISARO, R
    MAGARINO, J
    ZELLAMA, K
    SQUELARD, S
    GERMAIN, P
    MORHANGE, JF
    [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 3568 - 3575
  • [4] BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
  • [5] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY
    BUSTARRET, E
    HACHICHA, MA
    BRUNEL, M
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (20) : 1675 - 1677
  • [6] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS
    CAMPBELL, IH
    FAUCHET, PM
    [J]. SOLID STATE COMMUNICATIONS, 1986, 58 (10) : 739 - 741
  • [7] RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON
    IQBAL, Z
    VEPREK, S
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02): : 377 - 392
  • [8] RAMAN-SCATTERING FROM ION-IMPLANTED SILICON
    JAIN, KP
    SHUKLA, AK
    ASHOKAN, R
    ABBI, SC
    BALKANSKI, M
    [J]. PHYSICAL REVIEW B, 1985, 32 (10): : 6688 - 6691
  • [9] OBSERVATION OF THE AMORPHOUS-TO-CRYSTALLINE TRANSITION IN SILICON BY RAMAN-SCATTERING
    KAMIYA, T
    KISHI, M
    USHIROKAWA, A
    KATODA, T
    [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 377 - 379
  • [10] FORMATION OF AMORPHOUS SILICON BY ION-BOMBARDMENT AS A FUNCTION OF ION, TEMPERATURE, AND DOSE
    MOREHEAD, FF
    CROWDER, BL
    TITLE, RS
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1112 - &