IMPROVEMENT OF PHOTOLUMINESCENCE PROPERTIES OF ZNSE FILM GROWN BY HYDROGEN RADICAL-ENHANCED CHEMICAL VAPOR-DEPOSITION USING ALTERNATE GAS-SUPPLY AND SUBSTRATE BIAS APPLICATION

被引：5

作者：

GOTOH, J

SHIRAI, H

HANNA, J

SHIMIZU, I

机构：

[1] The Graduate School at Nagatsuta, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7B期

关键词：

ZNSE; HRCVD; DEDSE; LOW-TEMPERATURE GROWTH; ION BOMBARDMENT; ALTERNATE GAS SUPPLY;

D O I：

10.1143/JJAP.30.L1241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality ZnSe films were successfully grown on GaAs (100) at low temperatures, 200-degrees-C or lower, by hydrogen radical-enhanced chemical vapor deposition (HRCVD). Defects were markedly eliminated by the following factors: selection of source materials, avoidance of ion bombardment, and suppression of formation of adducts by alternate gas supply.

引用

收藏

页码：L1241 / L1243

页数：3

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