SURFACE DAMAGE IN NANOMACHINED SILICON

被引：12

作者：

PUTTICK, KE

JEYNES, C

RUDMAN, M

GEE, AE

CHAO, CL

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

[2] CRANFIELD INST TECHNOL,SCH IND & MFG SCI,CRANFIELD MK43 0AL,BEDS,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 02期

关键词：

Crystals - Dislocations - Ions - Scattering - Semiconducting Silicon - Surfaces - Surfaces - Defects;

D O I：

10.1088/0268-1242/7/2/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(111) silicon slices have been machined by a highly stiff single-point diamond turning machine to a finish of R(a) almost-equal-to 1 nm. The associated subsurface damage was found by Rutherford backscattering of 1.5 MeV He+ ions to be approximately 170 nm. It is suggested that this residual damage consists mainly of dislocations.

引用

页码：255 / 259

页数：5

共 16 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27

[2] ANNEALING OF SCRATCHES ON NEAR (111) SILICON SLICES [J].