KRF EXCIMER-LASER PROJECTION PATTERNED DEPOSITION OF ALUMINUM FROM TRIETHYLAMINE ALANE AS ADSORBATE PRECURSOR

被引：6

作者：

FOULON, F

STUKE, M

机构：

[1] Max-Planck-Institut für Biophysikalische Chemie, W-3400 Göttingen

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 18期

关键词：

D O I：

10.1063/1.109459

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

KrF pulsed excimer laser-induced decomposition of the triethylamine alane [(C2H5)3NAlH3] precursor in the adsorbed phase is shown to allow projection patterned deposition of Al at room temperature. The deposited height increases linearly with the laser energy dose suggesting that the decomposition is photolytically driven. Mirrorlike Al films are deposited at rates up to about one Al monolayer per pulse which corresponds to rates up to 2 mum/min when photolyzing at 1 00 Hz. Al films with good adhesion and resistivities down to 7.5 muOMEGA cm (2.5 times bulk), were deposited on quartz, Al2O3, and GaAs substrates. The process has good spatial selectivity. Patterns with 1 mum resolution have been generated.

引用

页码：2173 / 2175

页数：3

共 29 条

[1]

BATH R, 1986, J CRYST GROWTH, V77, P7

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