PROPERTIES OF GAP RED-EMITTING DIODES GROWN BY LIQUID-PHASE EPITAXY .I. EFFECT OF OXYGEN AND TELLURIUM CONCENTRATIONS IN EPITAXIAL N LAYER

被引：5

作者：

KASAMI, A

NAITO, M

TOYAMA, M

MAEDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1969年 / 8卷 / 12期

关键词：

D O I：

10.1143/JJAP.8.1469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1469 / &

共 22 条

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