OHMIC CONTACTS TO SEMICONDUCTING CERAMICS

被引：33

作者：

TURNER, DR

SAUER, HA

机构：

来源：

关键词：

D O I：

10.1149/1.2427662

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：250 / 251

页数：2

共 8 条

[1] Abner B., 1950, United States patent US, Patent No. [2,532,283, 2532283]
[2] Brenner A., 1950, U. S. Patent, Patent No. 2532284
[3] NEW LOW CONTACT RESISTANCE ELECTRODE
FLASCHEN, SS
VANUITERT, LG
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (02) : 190 - 190
[4] PEARLSTEIN F, 1955, MET FINISH, V53, P59
[5] SAUER HA, 1956, 1956 P INT EL COMP S, P41
[6] SAUER HA, UNPUB B AM CERAM SOC
[7] HIGH-FREQUENCY GALLIUM ARSENIDE POINT-CONTACT RECTIFIERS
SHARPLESS, WM
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (01): : 259 - 269
[8] ELECTROLESS NICKEL PLATING FOR MAKING OHMIC CONTACTS TO SILICON
SULLIVAN, MV
EIGLER, JH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1957, 104 (04) : 226 - 230