ELECTROABSORPTION IN LATTICE-MATCHED INGAALAS-INALAS QUANTUM-WELLS AT 1.3-MU-M

被引：4

作者：

CHENG, AN

WIEDER, HH

CHANG, WSC

机构：

[1] Department of Electrical and Computer Engineering, University of California at San Diego, CA 92093, La Jolla

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1109/68.466576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroabsorption properties of (In(0.53)Ga(0.47)AS)(0.7) (In0.52Al0.48As)(0.3)-In0.52Al0.48As quantum wells were investigated experimentally and analytically in order to form a semi-empirical model for 1.3 mu m optical modulator applications. The observed exciton energy shifts and changes in electron-hole wave function overlap integrals are in agreement with calculation for the quantum confined Stark effect, Empirically, we found that the room-temperature exciton absorption peak can be described by a Gaussian peak, and that the residual absorption should be characterized by an exponential tail. In order to provide realistic linewidth broadening parameters, empirical expressions are summarized here for this material.

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页码：1159 / 1161

页数：3

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