MBE GROWTH OF MULTIPLE QUANTUM-WELLS WITH ROOM-TEMPERATURE EXCITON PEAKS AT 1.3 MU-M

被引：3

作者：

KHITROVA, G

IWABUCHI, T

GIBBS, HM

机构：

[1] Optical Sciences Center The University of Arizona, Tucson

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1016/0749-6036(90)90347-A

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaAlInAs AlInAs multiple quantum wells have been grown lattice matched on InP substrates by taking into account the time dependence of the fluxes as the shutters open and close. RHEED oscillations are observed and used to calibrate layer thicknesses and growth quality. The half width of the lowest exciton peak is 12 meV. © 1990.

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页码：439 / 441

页数：3

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