1.3 MU-M ELECTROABSORPTION REFLECTION MODULATORS ON GAAS

被引：13

作者：

LORD, SM ^{[1
]}

TREZZA, JA ^{[1
]}

LARSON, MC ^{[1
]}

PEZESHKI, B ^{[1
]}

HARRIS, JS ^{[1
]}

机构：

[1] STANFORD UNIV,SOLID STATE LAB,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 06期

关键词：

D O I：

10.1063/1.109914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate a reflection electroabsorption modulator grown on a GaAs substrate operating near 1.3 mum, the dispersion minimum for silica fibers. The device was grown by molecular beam epitaxy and uses a novel technique of integrating the bottom quarter-wave mirror into a buffer with linearly graded In composition. The active area consisted of thirty InGaAs quantum wells with GaAs barriers. The mirror was formed by layers of InGaAs and InAlAs where the In concentration was graded from 0% to 35%. A maximum relative change in reflectivity, DELTAR/R, of 73% at 1.33 mum was achieved. Experimental results agree with simulations performed using the transfer matrix technique.

引用

页码：806 / 808

页数：3

共 11 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].