INVESTIGATION OF HIGH IN CONTENT INGAAS QUANTUM-WELLS GROWN ON GAAS BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

LORD, SM

PEZESHKI, B

JUN, JSH

机构：

[1] Solid State Electronics Laboratory, Stanford University

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

SEMICONDUCTOR GROWTH; EPITAXY AND EPITAXIAL GROWTH;

D O I：

10.1049/el:19920754

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excitonic resonances and the quantum confined Stark effect are observed near 1.3-mu-m in InGaAs quantum wells grown on GaAs using a slowly graded InGaAs buffer. The pin structure performs as a modulator with a relative transmission modulation of 12% at 1.3-mu-m and as a low leakage photo-detector.

引用

页码：1193 / 1195

页数：3

共 15 条

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