FAST TRANSIENT CAPACITANCE MEASUREMENTS FOR IMPLANTED DEEP LEVELS IN SILICON

被引：26

作者：

NAGASAWA, K ^{[1
]}

SCHULZ, M ^{[1
]}

机构：

[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,ECKER STR 4,D-78 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 8卷 / 01期

关键词：

D O I：

10.1007/BF00883667

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：35 / 42

页数：8

相关论文

共 23 条

[1] FIELD-INDEPENDENCE OF THERMAL EMISSION RATE IN AU-DOPED SILICON
BRAUN, S
GRIMMEISS, HG
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (10) : 1457 - +
[2] DETERMINATION OF DEEP ENERGY-LEVELS IN SI BY MOS TECHNIQUES
FAHRNER, W
GOETZBERGER, A
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (07) : 329 - +
[3] PROPERTIES OF A SINGLE-LEVEL SURFACE STATE INDUCED BY BE IMPLANTATION INTO SI-SIO2 INTERFACES
FAHRNER, W
GOETZBERGER, A
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 725 - 727
[4] HURRLE A, 1974, P INT C LATTICE DEFE, P474
[5] JOHNSON WS, 1969, PROJECTED RANGE STAT
[6] PROPERTIES OF GOLD ACCEPTOR STATE IN SILICON
KASSING, R
LENZ, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01): : 155 - 165
[7] DETERMINATION OF CAPTURE RATE CN OF GOLD ACCEPTOR LEVEL FROM SINGLE INJECTION N+-I-N+ SILICON SCLC DIODES
KASSING, R
LENZ, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 25 (01): : 131 - 139
[8] KIMERLING LC, TO BE PUBLISHED
[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[10] LANG DV, J APPL PHYS