A SCANNING TUNNELING MICROSCOPE STUDY OF THE SI(110) SURFACE

被引：44

作者：

HOEVEN, AJ

DIJKKAMP, D

VANLOENEN, EJ

VANHOOFT, PJGM

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(89)90767-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：165 / 172

页数：8

共 14 条

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[2] [Anonymous], 2007, NUMERICAL RECIPES AR
[3] TUNNELING MICROSCOPY OF SILICON AND GERMANIUM - SI(111) 7X7, SNGE(111) 7X7, GESI(111) 5X5, SI(111) 9X9, GE(111) 2X8, GE(100) 2X1, SI(110) 5X1
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 472 - 477
[4] Foley JD, 1982, FUNDAMENTALS INTERAC
[5] FORMATION OF SURFACE SUPERSTRUCTURES BY HEAT-TREATMENTS ON NI-CONTAMINATED SURFACE OF SI(110)
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[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5183 - 5186
[6] ISHIKAWA Y, 1987, SURF SCI, V187, pL606, DOI 10.1016/S0039-6028(87)80109-7
[7] OBSERVATIONS OF CLEAN SURFACES OF SI GE AND GAAS BY LOW-ENERGY ELECTRON DIFFRACTION
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[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (5-6) : 375 - &
[8] THE ADSORPTION BEHAVIOR OF O-2 ON THE CLEAN SI(110) SURFACE IN THE EARLY STAGE
KEIM, EG
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[J]. SURFACE SCIENCE, 1987, 186 (03) : L557 - L560
[9] KOEHLER UK, COMMUNICATION
[10] STRUCTURAL PHASE-TRANSITIONS AND SOME ELECTRONIC-PROPERTIES OF THE (110)SILICON SURFACE
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[J]. SURFACE SCIENCE, 1986, 171 (03) : 495 - 500