PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION ON 3-DIMENSIONAL SUBSTRATES

被引:3
作者
HALVERSON, W [1 ]
VAKERLIS, GD [1 ]
GARG, D [1 ]
DYER, PN [1 ]
机构
[1] AIR PROD & CHEM INC,ALLENTOWN,PA 18195
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 03期
关键词
D O I
10.1116/1.578168
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel plasma assisted chemical vapor deposition reactor forms ceramic coatings on "three-dimensional" surfaces of complicated parts such as cutting tools and bearing surfaces. The reactor chamber features a unique rf-driven electrode configuration to establish uniform, large volume, low temperature plasmas from which the coatings are deposited. Highly adherent silicon nitride coatings formed from silane/ammonia/argon plasmas have hardness values up to 30 GPa. Variations of methane/silane feed gas ratios produce microcrystalline silicon carbide films with C/Si atomic ratios ranging from 0.4 to 3; the coatings consist of free Si and stoichiometric SiC; SiC, free Si and diamond-like carbon (DLC); or SiC and DLC, depending on the methane/silane fraction. Hardness varies monotonically between about 10 and 60 GPa as the carbon fraction increases. SiC coatings significantly reduced wear rates in abrasive wear tests; Si-SiC coatings effectively protected molybdenum samples during a 180 h oxidation test in 650-degrees-C air.
引用
收藏
页码:439 / 443
页数:5
相关论文
共 8 条
[1]   THE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TIC, TIN AND TICXN1-X [J].
ARCHER, NJ .
THIN SOLID FILMS, 1981, 80 (1-3) :221-225
[2]  
HAZLEWOOD FJ, 1978, 1978 P INT C ADV SUR, P147
[3]   PLASMA-ENHANCED CVD - OXIDES, NITRIDES, TRANSITION-METALS, AND TRANSITION-METAL SILICIDES [J].
HESS, DW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :244-252
[4]   PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TITANIUM NITRIDE IN A CAPACITIVELY COUPLED RADIO-FREQUENCY DISCHARGE [J].
LAIMER, J ;
STORI, H ;
RODHAMMER, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (05) :2952-2959
[5]   GROWTH OF DIAMOND BY RF PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION [J].
MEYER, DE ;
IANNO, NJ ;
WOOLLAM, JA ;
SWARTZLANDER, AB ;
NELSON, AJ .
JOURNAL OF MATERIALS RESEARCH, 1988, 3 (06) :1397-1403
[6]   INDUCTION HEATED PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION OF SIN [J].
MITO, H ;
SEKIGUCHI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :475-479
[7]   DOWNSTREAM PLASMA-ENHANCED DIAMOND FILM DEPOSITION [J].
PICKRELL, DJ ;
ZHU, W ;
BADZIAN, AR ;
MESSIER, R ;
NEWNHAM, RE .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2010-2012
[8]   PLASMA DEPOSITION OF INORGANIC THIN-FILMS [J].
REINBERG, AR .
ANNUAL REVIEW OF MATERIALS SCIENCE, 1979, 9 :341-372