INDUCTION HEATED PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION OF SIN

被引:13
作者
MITO, H
SEKIGUCHI, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期
关键词
D O I
10.1116/1.573874
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:475 / 479
页数:5
相关论文
共 6 条
[1]  
Babat G.I., 1947, J I ELECT ENG 3, V94, P27, DOI [10.1049/ji-3-2.1947.0005, DOI 10.1049/JI-3-2.1947.0005]
[3]  
ROSLER RS, 1976, SOLID STATE TECHNOL, V19, P45
[4]   REACTIVE PLASMA DEPOSITED SI-N FILMS FOR MOS-LSI PASSIVATION [J].
SINHA, AK ;
LEVINSTEIN, HJ ;
SMITH, TE ;
QUINTANA, G ;
HASZKO, SE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :601-608
[5]   CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].
STERLING, HF ;
SWANN, RCG .
SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&
[6]  
VANDENBREKEL CHJ, 1972, J ELECTROCHEM SOC, V119, P372