A NEW DEPOSITION MODE IN PLASMA-ENHANCED CRYOGENIC CVD

被引：7

作者：

SHIN, H

MIYAZAKI, S

HIROSE, M

机构：

[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80220-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A novel deposition mode in the plasma-enhanced CVD of silicon has been found. The quenching of thermal reactions on the growth surface by employing a cryogenic substrate temperature and the reduction of ion-induced reactions by using a triode reactor have resulted in the formation of liquefied precursors on the surface. The silicon film deposition onto a fine patterned substrate proceeds from the groove bottoms and finally the surface is self-planarized. This new deposition mode enables us to prepare high quality, long-chain polysilane with an optical bandgap of 3.1 eV.

引用

页码：713 / 716

页数：4

共 9 条

[1] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].